Prof. WANG Jianpu

Executive Deputy Director of Institute of Advanced Materials

Contacts

Email: iamjpwang@njtech.edu.cn

Address: 5 Xin Mo Fan Road, Nanjing Tech University, Nanjing 210009, China

Research Interests

Organic semiconductor devices and device physics/Organic spintronics/Organic-inorganic hybrid device and device physics

Biographical Information

2003-2006: Research engineer; Samsung Electronics, South Korea.

2006-2009: PhD degree; Cavendish Laboratory, University of Cambridge, UK.

2009-2013: Post-Doc.; Cavendish Laboratory, University of Cambridge, UK.

2013-        : Professor; Institute of Advanced Materials, Nanjing Tech University.

Academic Achievements

Prof. WANG Jianpu successively worked in the top industrial and academic organic electronics laboratories and investigated in depth on several key challenges on organic electronic devices. He solved the lifetime issue of OLED display and figured out the control method of the exciton spinning statistics of organic semiconductors, and he revealed the efficiency loss channel of photovoltaic devices, and he developed low-cost and low-power consumption organic memory devices. He published ~30 SCI papers in this field including Nature, Nature Communications, Physical Review Letters, Applied Physics Letters. Additionally, he holds 7 USA patents filed. One of the patents (US7443093, first author) achieves the double lifetime of OLED displays, solving the bottle-neck issue to market, which has been widely applied in OLED displays.

Publications:

1. X. Dai, Z. Zhang, Y. Jin*, Y. Niu, H. Cao, X. Liang, L. Chen, J. Wang,  X. Peng*, Solution-processed and high-performance light-emitting diodes based on quantum dots, Nature (Accepted).

2. C. Li, G. Beirne, G. Kamita, G. Lakhwani, J. Wang*  and N. Greenham*, Probing the switching mechanism in ZnO nanoparticle memristors, Journal of Applied Physics (Accepted).

3. X. Liang, Y. Ren, S. Bai, N. Zhang, X. Dai, X. Wang, H. He, C. Jin, Z. Ye, Q. Chen, L. Chen, J. Wang, Y. Jin*, Colloidal indium doped zinc oxide nanocrystals with tunable work function: rational synthesis and optoelectronic applications, Chemistry of Materials (Accepted).

4. J. Wang* and N. Greenham*, Charge transport in colloidal ZnO nanocrystal solids: The significance of surface states, Applied Physics Letters, 2014, 104, 193111.

5. C. Li, D. Credgington, D. H. Ko, Z. Rong, J. Wang* and N. Greenham*, Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers, Physical Chemistry and Chemical Physics, 2014, 16, 12131.

6. A. Chepelianskii, J. Wang and R. Friend*, Low-temperature transport properties of photogenerated charges in organic materials, Physical Review Letters, 2014, 112, 126802.

7. F. Gao, Z. Li, J. Wang, A. Rao, I. Howard, A. Abrusci, S. Massip, C. McNeill and N. Greenham*, Trap-induced losses in hybrid photovoltaics, ACS Nano, 2014, 8, 3213.

8. D. Ji, L. Jiang*, Y. Guo, H. Dong*, J. Wang, H. Chen, Q. Meng, X. Fu, G. Tian, D. Wu, G. Yu*, Y. Liu and W. Hu*, "Regioselective deposition" method to pattern silver electrodes facilely and efficiently with high resolution: Towards all-solution-processed, high-performanced, bottom-contacted, flexible, polymer-based electronics, Advanced Functional Materials, 2014, 24, 3783.

9. M.Ertherington, J. Wang*, P. Chow and N. Greenham*, Recombination pathways in polymer:fullerene photovoltaics observed through spin polarization measurements, Applied Physics Letters, 2014, 104, 063304.

10.  F.Gao*, S. Ren* and J. Wang*, The renaissance of hybrid organic solar cells: Progresses, challenges, and perspectives, Energy & Environmental Science, 2013, 6, 2020.

11. J. Wang*, A. Chepelianskii, F. Gao and N. Greenham*, Control of exciton spin statistics through spin polarization in organic optoelectronic devices, Nature Communications, 2012, 3, 1191.

12. F. Gao, J. Wang, N. J. Blakesley, Z. Li, I. Hwang and N. Greenham*, Quantifying Loss Mechanisms in Polymer:Fullerene Blends, Advanced Energy Materials, 2012, 2, 956.

13. X. Cheng, M. Carironi*, Y. Noh, C. Newman, J. Wang, M. Lee, K. Banger, R. Pietro, A. Facchetti, H. Sirringhaus, Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes, Organic Electronics, 2012, 13, 320.

14. J. Wang*, F. Gao, X. Cheng, M. Caironi, X. Yang, and N. Greenham, Entirely Solution-Processed Low-Power Write-Once-Read-Many-Times Memory Devices and Their Operation Mechanism, Organic Electronics, 2011, 12, 1271.

15. S. Dalgleish, J. Labram, Z. Li, J. Wang, C. McNeill, T. Anthopoulos, N. Greenham and N. Robertson, Indole-substituted nickel dithiolene complexes in electronic and optoelectronic devices, Organic Electronics, 2011, 21, 15422.

16. J. Wang*, F. Gao, T. Hallam and N. Greenham, Surface-State-induced Stark Effect in ZnO Nanocrystals, Journal of Physics: Condensed Matter, 2010, 22, 395009.

17. J. Wang*, F. Gao and N. Greenham, Low Power Write-Once-Read-Many-Times Memory Devices, Applied Physics Letters, 2010, 97, 053301.

18. X. Cheng, M. Caironi, Y. Noh, J. Wang, C. Newman, H. Yan, A. Facchetti and H. Sirringhaus*, Air Stable Cross-Linked Cytop Ultrathin Gate Dielectric for High Yield Low-Voltage Top-Gate Organic Field-Effect Transistions, Chemistry of Materials, 2010, 22, 1599.

19. J. Wang, B. Sun, F. Gao and N. C. Greenham*, Memristive Device Based on Solution-processed ZnO Nanocrystals, Physica Status Solidi A, 2010, 207, 484.

20. X. Cheng, Y. Noh, J. Wang, M. Tello, J. Frisch, R. Blum, N. Koch and H. Sirringhaus*, Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self Assembled Monolayers, Advanced Functional Materials, 2009, 19, 2407.

21. Y. Jin, J. Wang, B. Sun, J. C. Blakesley and N. C. Greenham*, Solution-Processed Ultraviolet Photodetectors Based on Colloidal ZnO Nanoparticles,  Nano Letters, 2008, 8, 1649.

Patents:

1. D. Lee, J. Wang, J. Rhee, J. Chung, S. Hong, B. Choi, 2010, Display Device and Fabricating Method Thereof, US patent No. 7642712 (Assigned to Samsung Electronics)

2. J. Wang and N. Greenham, Device and Method of Forming a Device, British Patent Application No. 0907659.7 (2009)