报告题目：Light Induced Quasi-Fermi Level Splitting in Molecular Semiconductor Alloys

报告人：Dinesh Kabra 副教授

邀请人：王建浦 教授

报告时间：11月26日（星期二）9:30

报告地点：科技创新大楼C501

Abstract

Quasi-Fermi-level (QFL) splitting is a direct measure of the open-circuit voltage (VOC) in an optically illuminated semiconductor solar cell (SC). The evolution of quasi Fermi level splitting under 1 sun illumination in ternary blends of Gaussian disordered (GD) excitonic molecular semiconductors (MSs) is a complex process. Our analytical model based on population occupancy in GD systems describes the change in QFL as a function of alloy composition in ternary (two n-type and one p-type) MSs. Unprecedented, our model could predict a remarkable quantitative change in the QFL of light induced holes in such alloys. This analytical model, combined with temperature dependent mobility studies, also reveals that a suitable n-type environment can reduce the polaronic disorder (Ea) for holes. Furthermore, Ea values are correlated with the recombination dynamics of photoinduced carriers.