English | NanjingTech | Contact
专题讲座    
  科研信息   
  院务公告   
  学生事务   
  专题讲座   
  学术会议   
  IAM星火大讲堂   

当前位置: 网站首页 通知公告 专题讲座 正文
关于印度孟买理工学院Dinesh Kabra 副教授学术报告的通知
 添加时间:2019/11/25 发布:
二维码

扫描二维码,在手机中查看。

报告题目:Light Induced Quasi-Fermi Level Splitting in Molecular Semiconductor Alloys

报告人:Dinesh Kabra 副教授

邀请人:王建浦 教授

报告时间:11月26日(星期二)9:30

报告地点:科技创新大楼C501

Abstract

Quasi-Fermi-level (QFL) splitting is a direct measure of the open-circuit voltage (VOC) in an optically illuminated semiconductor solar cell (SC). The evolution of quasi Fermi level splitting under 1 sun illumination in ternary blends of Gaussian disordered (GD) excitonic molecular semiconductors (MSs) is a complex process. Our analytical model based on population occupancy in GD systems describes the change in QFL as a function of alloy composition in ternary (two n-type and one p-type) MSs. Unprecedented, our model could predict a remarkable quantitative change in the QFL of light induced holes in such alloys. This analytical model, combined with temperature dependent mobility studies, also reveals that a suitable n-type environment can reduce the polaronic disorder (Ea) for holes. Furthermore, Ea values are correlated with the recombination dynamics of photoinduced carriers.

Copyright © 2017-2019 南京工业大学先进材料研究院 All rights reserved.

官方微信
地址:南京市新模范马路5号138信箱 总共访问:   [旧版回顾]
电话: 025-83587982 邮件:iam@njtech.edu.cn